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| INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor 7N60 *FEATURES *Drain Current -ID= 7A@ TC=25 *Drain Source Voltage: VDSS= 600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 1.0(Max) *Avalanche Energy Specified *Fast Switching *Simple Drive Requirements *DESCRITION *Designed for high efficiency switch mode power supply. *ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous w ww scs .i VALUE 600 20 7 28 125 150 -55~150 .cn mi e UNIT V V A A W Drain Current-Single Plused Total Dissipation @TC=25 Max. Operating Junction Temperature Storage Temperature *THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.0 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 7N60 MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.5A VGS= 20V;VDS= 0 1.0 100 IGSS Gate-Body Leakage Current nA A IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 1 VSD Forward On-Voltage IS= 7A; VGS= 0 * w w scs .i w .cn mi e 1.8 V isc Websitewww.iscsemi.cn |
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